Antennas, antennas, and more antennas are one of the keys to successfully developing 5G new radio (NR) devices employing millimeter wave (mmWave) bandwidths. 5G NR handsets are highly complex devices. They have to handle the new 5G mmWave bands, including 4×4 multiple input and multiple output (MIMO) antennas, 3GPP specified Evolved Universal Terrestrial Radio Access […]
What is the 5G RF/mmWave signal chain?
The 5G RF/mmWave signal chain is expected to be the same as, and different from, the RF signal chain for today’s LTE Advanced devices. 5G consists of two separate frequency bands, FR1 is mostly repurposed LTE bands, and FR2 bands are in the mmWave region. As a result, 5G in the FR1 frequencies can use […]
Basics of mmWave and its applications
The millimeter band spans from 30 to 300 gigahertz (GHz) and lies between the super high-frequency and far infrared bands, the lower part of which is the terahertz band. Radio waves in this band have wavelengths from ten to one millimeter; thus, radiation in this band is called millimeter waves, sometimes abbreviated MMW or mmWave. […]
What are RF inductors?
Radio frequency (RF) inductors have several uses and are available in various construction types to suit the performance needs of specific applications. Matching, resonators, and chokes are common uses for inductors in RF circuits. Matching involves eliminating impedance mismatches and minimizing reflection and losses in the lines between circuit blocks such as the antenna and […]
Class D audio, Gallium-Nitride versus Silicon – Virtual Roundtable (part 2 of 2)
In this second part of EEWorld’s “virtual roundtable” discussion on Class D audio, our panelists delve into the impact that the emergence of gallium-nitride (GaN) is having on Class D designs: Where are silicon devices still dominant? What are the performance benefits of using GaN in Class D amplifiers? And what are the anticipated future […]
Class D audio technology and applications – Virtual Roundtable (part 1 of 2)
The first part of EEWorld’s two-part “virtual roundtable” discussion on Class D audio considers technical challenges and design trade-offs for engineers using Class D audio technology. Joining us for this virtual roundtable are: Joshua LeMaire (JL), Audio Systems Architect at Analog Devices; Steve Colino (SC), Vice President Strategic Technical Sales with Efficient Power Conversion; and […]
Rudiments of radiated EMI/EMC
Radiated emissions standards are generally more focused on higher-frequency noise sources. At about 30MHz, there is a transition between concern with conducted and radiated emissions. Above that frequency, conducted emissions are not usually a major problem. And below 30MHz, the various interconnects and conductors in most electronic systems are not effective antennas for emitting radiated […]
Conducted and coupled EMI/EMC concepts
In addition to the International Telecommunications Union (discussed in part 1 of this FAQ series), there are several organizations that define and regulate acceptable levels of conducted and radiated emissions from electronic devices. These various agencies have developed numerous standards generally based on the operational environment of the specific device. Effectively managing EMI is a […]
EMI, EMC, EMS, and the ITU
Controlling electromagnetic interference (EMI), also referred to as radio frequency interference (RFI), and minimizing electromagnetic susceptibility (EMS) are two important aspects of maintaining electromagnetic compatibility (EMC). Ensuring electromagnetic compatibility at a specified level and under specific operating conditions is a common demand in the design of almost all electronic systems. Common terms used when discussing […]
Sound design considerations for Class D amps
The first two FAQs in this series, “Class D Amplifiers for High-Efficiency Switched-Mode Sound” and “Class D Audio – Why Now?” focused on basic Class D amplifier topologies, modulation techniques, general component and technology advancements that have made Class D amplifiers an increasingly viable option, and the evolving tradeoffs between silicon and GaN power devices. […]
