Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS PE42525 and PE426525, the industry’s first RF SOI switches to operate up to 60 GHz. These two switches set a new standard for RF SOI at microwave frequencies and significantly extend Peregrine’s high frequency portfolio into frequencies previously dominated by gallium-arsenide (GaAs) technology. Both 60 GHz switches deliver exceptional performance in all key RF parameters and have a fast switching speed of only 8 nanoseconds. The PE42525 is ideal for test-and-measurement equipment, microwave-backhaul solutions and higher frequency switching in 5G systems. The PE426525 boasts an extended temperature range making it desirable for harsh-environment applications such oil-and-gas exploration and other industrial markets.
“From 26.5 GHz to 40 GHz and now 60 GHz, Peregrine’s high frequency portfolio continues to reach frequencies and performance levels previously considered unattainable in RF SOI,” says Kinana Hussain, director of marketing at Peregrine Semiconductor. “The PE42525 and PE426525 are proof that RF SOI can deliver a high-performing, reliable and fast switching solution at microwave frequencies. As more applications demand higher frequency products, Peregrine will continue to break more barriers in RF SOI.”
The PE42525 and PE426525 join Peregrine’s high frequency product portfolio, which includes multiple switches, an image-reject mixer and monolithic phase and amplitude controllers (MPACs). Peregrine’s proprietary UltraCMOS technology platform enables these products to reach high frequencies without compromising performance or reliability.
Supporting a wide frequency range from 9 kHz to 60 GHz, the PE42525 and PE426525 are single-pole double-throw (SPDT) RF switches. The two reflective switches deliver an incredibly fast switching speed of 8 nanoseconds and RF TRISE/TFALL time of 4 nanoseconds. Both switches have low power consumption of 450 nanoamperes. With exceptional performance across all key RF specifications, the switches deliver high port-to-port isolation, low insertion loss, high power handling, high linearity and excellent ESD protection of 2 kV HBM. At 50 GHz, the PE42525 and PE426525 exhibit port-to-port isolation of 38 dB and insertion loss of 1.9 dB. The PE426525 has an extended temperature range that extends from -55 to +125 degrees Celsius.
The PE42525 and PE426525 are available as a flip-chip die with 500 microns bump pitch—the best form factor for high frequency performance as it eliminates performance variations due to wire-bond length.
Samples and evaluation kits are available now. For 1K-quantity orders, the PE42525 die is$40 each, and the PE426525 is $48 each.
