WIN Semiconductors Corp. has released its newest 0.1µm pHEMT technology: PP10-20. Building on the proven PP10 platform, this second-generation technology offers a substantial transistor gain, improving the ƒt/ƒmax to 160GHz and 240 GHz. These improvements maintain the reliable 4V operation necessary for backhaul power amplifiers and high linearity receivers operating from W-band through D-band. Targeting […]
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Sample kits cover GaN on SiC 0.15 μm-gate technology targeting transmit power amps in 5G mmWave radio
WIN Semiconductors Corp has developed sample kits for its gallium nitride (GaN) based 0.15μm-gate technology. The NP15-00 mmWave compound semiconductor technology is ideal for transmit power amplifiers used in 5G mmWave radio access networks, satellite communications and radar systems. Supporting full MMICs, the NP15-00 platform allows customers to develop compact, linear or saturated high power […]
