
Manufactured on pSemi’s UltraCMOS process, a patented silicon-on-insulator (SOI) technology, PE423211 is designed for use in high-performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth Low Energy (BLE), and UWB applications up to 10.6 GHz. The PE423211 features fast switching speed, high-power handling, and robust ESD and temperature performance, all in a compact 6-lead 1.6 × 1.6 mm DFN package.
The PE423211 is AEC-Q100 Grade 2 qualified making it ideal for use in battery-powered and power-sensitive devices. Its suitability for BLE and UWB applications includes secure car access, telematics, sensing, infotainment, in-cabin monitoring systems (ICMS), and general-purpose switching.
The new RF switch consumes less than 90 nA of current and covers current and future UWB high-frequency spectrums up to 10.6 GHz. Offering low insertion loss and high isolation with an operating temperature range of -40 to +105 degrees Celsius, the PE423211 delivers excellent ESD performance at 2000V at HBM and 500V at CDM.